Why the long-term charge offset drift in Si single-electron tunneling transistors is much smaller (better) than in metal-based ones: Two-level fluctuator stability

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Zimmerman, Neil M ^a   Huber, William H ^b,e   Simonds, Brian ^a   Hourdakis, Emmanouel ^a   Fujiwara, Akira ^b   Ono, Yukinori ^b   Takahashi, Yasuo ^b,f   Inokawa, Hiroshi ^b,g   Furlan, Miha ^c,d   Keller, Mark W ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c ETH ZURICH   (Switzerland)

^d Swiss Federal Office of Metrology   (Switzerland)

^e GE GLOBAL RESEARCH   (United States)

^f HOKKAIDO UNIVERSITY   (Japan)

^g SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE NOISE; CHARGE OFFSET; DEFECT-FREE; FLUCTUATORS; GLASSY MATERIALS; HEAT EVOLUTION; METAL OXIDES; NON-EQUILIBRIUM; SHORT PERIODS; SI DEVICES; SI-BASED DEVICES; SINGLE-ELECTRON TUNNELING; SINGLE-ELECTRON TUNNELING TRANSISTORS; TIME-DEPENDENT;

ELECTRON TUNNELING; EXCAVATION; KETONES; METALS; OPTICAL DESIGN; SILICON; TRANSIENTS; TUNNEL JUNCTIONS; TUNNELING (EXCAVATION);

JITTER;

EID: 49749149218     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949700     Document Type: Article

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