Room-temperature single-electron transfer and detection with silicon nanodevices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 199-202

  Nishiguchi, Katsuhiko ^a   Fujiwara, Akira ^a   Ono, Yukinori ^a   Inokawa, Hiroshi ^a   Takahashi, Yasuo ^a,b  

^a NTT Basic Research Laboratories   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOG TO DIGITAL CONVERSION; CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); ELECTROMETERS; HEURISTIC METHODS; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA; ELECTRONS; NANOSTRUCTURED MATERIALS;

ELECTRONIC CURRENTS; SINGLE ELECTRONS; SINGLE-ELECTRON TRANSISTOR (SET); TUNNELING JUNCTION;

SILICON; SILICON ON INSULATOR TECHNOLOGY;

HIGH-SPEED TRANSFERS; NANO-DEVICES; SI WIRES; SILICON NANODEVICES; SILICON ON INSULATOR; SINGLE ELECTRON; SINGLE ELECTRON BOX; SINGLE ELECTRON DETECTION; SINGLE ELECTRON TRANSFER;

EID: 21644490014     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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