Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots

Journal of Physics D: Applied Physics

Volumn 45, Issue 10, 2012, Pages

  Chang, J E ^a   Liao, P H ^a   Chien, C Y ^a   Hsu, J C ^a   Hung, M T ^a   Chang, H T ^a   Lee, S W ^a   Chen, W Y ^a   Hsu, T M ^a   George, Tom ^b   Li, P W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b Zyomed Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; DIELECTRIC MATRIXES; GE QUANTUM DOT; INTERFACIAL SURFACE; MATRIX; MORPHOLOGY CHANGES; OPTICAL AND THERMAL PROPERTIES; QUANTUM CONFINEMENT EFFECTS; SPHERICAL SHAPE; SURFACE EFFECT;

ELECTRONIC STRUCTURE; GERMANIUM; OSTWALD RIPENING; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON COMPOUNDS; SURFACE CHEMISTRY;

THERMODYNAMIC PROPERTIES;

EID: 84863235683     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/10/105303     Document Type: Article

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