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Volumn 4, Issue 5, 2001, Pages 397-403
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Stress effects on defects and dopant diffusion in Si
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Author keywords
Diffusion; Dopant; Point defect; Strain; Stress
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Indexed keywords
DIFFUSION IN SOLIDS;
HYDROSTATIC PRESSURE;
POINT DEFECTS;
PRESSURE EFFECTS;
SEMICONDUCTOR DOPING;
SINGLE CRYSTALS;
STRESS ANALYSIS;
THERMODYNAMICS;
DOPANTS;
STRESS EFFECTS;
SEMICONDUCTING SILICON;
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EID: 0035474194
PISSN: 13698001
EISSN: None
Source Type: Journal
DOI: 10.1016/S1369-8001(01)00014-2 Document Type: Review |
Times cited : (34)
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References (32)
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