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Volumn 4, Issue 5, 2001, Pages 397-403

Stress effects on defects and dopant diffusion in Si

Author keywords

Diffusion; Dopant; Point defect; Strain; Stress

Indexed keywords

DIFFUSION IN SOLIDS; HYDROSTATIC PRESSURE; POINT DEFECTS; PRESSURE EFFECTS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STRESS ANALYSIS; THERMODYNAMICS;

EID: 0035474194     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(01)00014-2     Document Type: Review
Times cited : (34)

References (32)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.