First-principles calculations of self-interstitial defect structures and diffusion paths in silicon

Journal of Physics Condensed Matter

Volumn 11, Issue 50, 1999, Pages 10437-10450

  Needs, R J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001384405     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/50/332     Document Type: Article

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