Formation of thermal vacancies in highly As and P doped Si

Physical Review Letters

Volumn 93, Issue 25, 2004, Pages

  Ranki, V ^a   Saarinen, K ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNIHILATION RADIATION; THERMAL EQUILIBRIUM; THERMAL VACANCIES; VACANCY DEFECTS;

ANNEALING; ARSENIC; BINDING ENERGY; DOPING (ADDITIVES); DOPPLER EFFECT; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; ENTHALPY; IMPURITIES; PHOSPHORUS; POSITRON ANNIHILATION SPECTROSCOPY; QUENCHING; SILICON; THERMODYNAMICS;

THERMAL EFFECTS;

EID: 37649031417     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.255502     Document Type: Article

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