Vacancy-mediated diffusion in biaxially strained Si

Applied Physics Letters

Volumn 98, Issue 3, 2011, Pages

  Caliste, Damien ^a   Rushchanskii, Konstantin Z ^a   Pochet, Pascal ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; EXPERIMENTAL DATA; PURE SILICON; REANALYSIS; SI(1 0 0); STRAIN DEPENDENCE; STRAINED-SI; TEMPERATURE DEPENDENCE;

ACTIVATION ANALYSIS;

ACTIVATION ENERGY;

EID: 79251590774     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3548547     Document Type: Article

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