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Applied Physics Letters

Volumn 101, Issue 15, 2012, Pages

Improvement of resistive switching in NiO-based nanowires by inserting Pt layers

(6) Huang, Yen Chun a Chen, Po Yuan b Chin, Tsung Shune c Liu, Ru Shi d Huang, Chao Yuan b Lai, Chih Huang a

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

c FENG CHIA UNIVERSITY (Taiwan)

d NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-RESISTANCE STATE; MULTI-LAYERED; NON-POLAR; OXYGEN IONS; OXYGEN-RELATED DEFECTS; PERCOLATION PATH; POLYCRYSTALLINE; RESISTIVE SWITCHING; SWITCHING PARAMETERS; SWITCHING VOLTAGES; TEMPERATURE DEPENDENCE;

ELECTRODES; IONS; OXYGEN; PLATINUM; SOLVENTS; SWITCHING SYSTEMS;

NANOWIRES;

EID: 84867498615 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4758482 Document Type: Article

Times cited : (24)

References (37)

1
- 35748974883
- 10.1038/nmat2023
- R. Waser and M. Aono, Nature Mater. 6, 833-840 (2007). 10.1038/nmat2023
- (2007) Nature Mater. , vol.6 , pp. 833-840
- Waser, R.¹ Aono, M.²

2
- 43549126477
- 10.1016/S1369-7021(08)70119-6
- A. Sawa, Mater. Today 11 (6), 28-36 (2008). 10.1016/S1369-7021(08)70119-6
- (2008) Mater. Today , vol.11 , Issue.6 , pp. 28-36
- Sawa, A.¹

3
- 43049126833
- 10.1038/nature06932
- D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453 (7191), 80-83 (2008). 10.1038/nature06932
- (2008) Nature , vol.453 , Issue.7191 , pp. 80-83
- Strukov, D.B.¹ Snider, G.S.² Stewart, D.R.³ Williams, R.S.⁴

4
- 19944434155
- 10.1063/1.1831560
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 85 (23), 5655-5657 (2004). 10.1063/1.1831560
- (2004) Appl. Phys. Lett. , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.S.¹¹ Choi, J.S.¹² Park, B.H.¹³

5
- 33745013331
- 10.1063/1.2210087
- D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. I. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. 88 (23), 232106 (2006). 10.1063/1.2210087
- (2006) Appl. Phys. Lett. , vol.88 , Issue.23 , pp. 232106
- Kim, D.C.¹ Lee, M.J.² Ahn, S.E.³ Seo, S.⁴ Park, J.C.⁵ Yoo, I.K.⁶ Baek, I.G.⁷ Kim, H.J.⁸ Yim, E.K.⁹ Lee, J.E.¹⁰ Park, S.O.¹¹ Kim, H.S.¹² Chung, U.I.¹³ Moon, J.T.¹⁴ Ryu, B.I.¹⁵

6
- 54949089222
- 10.1002/adma.200702081
- S. E. Ahn, M. J. Lee, Y. Park, B. S. Kang, C. B. Lee, K. H. Kim, S. Seo, D. S. Suh, D. C. Kim, J. Hur, W. Xianyu, G. Stefanovich, H. A. Yin, I. K. Yoo, A. H. Lee, J. B. Park, I. G. Baek, and B. H. Park, Adv. Mater. 20 (5), 924-928 (2008). 10.1002/adma.200702081
- (2008) Adv. Mater. , vol.20 , Issue.5 , pp. 924-928
- Ahn, S.E.¹ Lee, M.J.² Park, Y.³ Kang, B.S.⁴ Lee, C.B.⁵ Kim, K.H.⁶ Seo, S.⁷ Suh, D.S.⁸ Kim, D.C.⁹ Hur, J.¹⁰ Xianyu, W.¹¹ Stefanovich, G.¹² Yin, H.A.¹³ Yoo, I.K.¹⁴ Lee, A.H.¹⁵ Park, J.B.¹⁶ Baek, I.G.¹⁷ Park, B.H.¹⁸

7
- 65249161894
- 10.1021/nl803387q
- M. J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S. E. Ahn, K. H. Kim, C. B. Lee, C. J. Kim, I. K. Yoo, D. H. Seo, X. S. Li, J. B. Park, J. H. Lee, and Y. Park, Nano Lett. 9 (4), 1476-1481 (2009). 10.1021/nl803387q
- (2009) Nano Lett. , vol.9 , Issue.4 , pp. 1476-1481
- Lee, M.J.¹ Han, S.² Jeon, S.H.³ Park, B.H.⁴ Kang, B.S.⁵ Ahn, S.E.⁶ Kim, K.H.⁷ Lee, C.B.⁸ Kim, C.J.⁹ Yoo, I.K.¹⁰ Seo, D.H.¹¹ Li, X.S.¹² Park, J.B.¹³ Lee, J.H.¹⁴ Park, Y.¹⁵

8
- 76649133422
- 10.1038/nnano.2009.456
- D.-H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. L. Lee, G. H. Kim, X.-S. L. Li, G.-S. Park, B. L. Lee, S. H. Han, M. K. Kim, and C. S. Hwang, Nat. Nanotechnol. 5, 148-153 (2010). 10.1038/nnano.2009.456
- (2010) Nat. Nanotechnol. , vol.5 , pp. 148-153
- Kwon, D.-H.¹ Kim, K.M.² Jang, J.H.³ Jeon, J.M.⁴ Lee, M.H.L.⁵ Kim, G.H.⁶ Li, X.-S.L.⁷ Park, G.-S.⁸ Lee, B.L.⁹ Han, S.H.¹⁰ Kim, M.K.¹¹ Hwang, C.S.¹²

9
- 38349103053
- 10.1063/1.2834852
- W. Y. Chang, Y. C. Lai, T. B. Wu, S. F. Wang, F. Chen, and M. J. Tsai, Appl. Phys. Lett. 92 (2), 022110 (2008). 10.1063/1.2834852
- (2008) Appl. Phys. Lett. , vol.92 , Issue.2 , pp. 022110
- Chang, W.Y.¹ Lai, Y.C.² Wu, T.B.³ Wang, S.F.⁴ Chen, F.⁵ Tsai, M.J.⁶

10
- 65249125383
- 10.1021/nl900006g
- Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9 (4), 1636-1643 (2009). 10.1021/nl900006g
- (2009) Nano Lett. , vol.9 , Issue.4 , pp. 1636-1643
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

11
- 48249096013
- 10.1063/1.2958234
- S. I. Kim, J. H. Lee, Y. W. Chang, S. S. Hwang, and K. H. Yoo, Appl. Phys. Lett. 93 (3), 033503 (2008). 10.1063/1.2958234
- (2008) Appl. Phys. Lett. , vol.93 , Issue.3 , pp. 033503
- Kim, S.I.¹ Lee, J.H.² Chang, Y.W.³ Hwang, S.S.⁴ Yoo, K.H.⁵

12
- 70450245376
- 10.1063/1.3263733
- E. D. Herderick, K. M. Reddy, R. N. Sample, T. I. Draskovic, and N. P. Padture, Appl. Phys. Lett. 95 (20), 203505 (2009). 10.1063/1.3263733
- (2009) Appl. Phys. Lett. , vol.95 , Issue.20 , pp. 203505
- Herderick, E.D.¹ Reddy, K.M.² Sample, R.N.³ Draskovic, T.I.⁴ Padture, N.P.⁵

13
- 77952347658
- 10.1021/ja101742f
- K. Oka, T. Yanagida, K. Nagashima, T. Kawai, J. S. Kim, and B. H. Park, J. Am. Chem. Soc. 132 (19), 6634-6635 (2010). 10.1021/ja101742f
- (2010) J. Am. Chem. Soc. , vol.132 , Issue.19 , pp. 6634-6635
- Oka, K.¹ Yanagida, T.² Nagashima, K.³ Kawai, T.⁴ Kim, J.S.⁵ Park, B.H.⁶

14
- 77951064806
- 10.1021/nl9042906
- K. Nagashima, T. Yanagida, K. Oka, M. Taniguchi, T. Kawai, J. S. Kim, and B. H. Park, Nano Lett. 10 (4), 1359-1363 (2010). 10.1021/nl9042906
- (2010) Nano Lett. , vol.10 , Issue.4 , pp. 1359-1363
- Nagashima, K.¹ Yanagida, T.² Oka, K.³ Taniguchi, M.⁴ Kawai, T.⁵ Kim, J.S.⁶ Park, B.H.⁷

15
- 78649570147
- 10.1063/1.3511756
- Z.-L. Tseng, P.-C. Kao, M.-F. Shih, H.-H. Huang, J.-Y. Wang, and S.-Y. Chu, Appl. Phys. Lett. 97, 212103 (2010). 10.1063/1.3511756
- (2010) Appl. Phys. Lett. , vol.97 , pp. 212103
- Tseng, Z.-L.¹ Kao, P.-C.² Shih, M.-F.³ Huang, H.-H.⁴ Wang, J.-Y.⁵ Chu, S.-Y.⁶

16
- 80051646234
- 10.1149/1.3617442
- F. Zhang, X. Gan, X. Li, L. Wu, X. Gao, R. Zheng, Y. He, X. Liu, and R. Yang, Electrochem. Solid-State Lett. 14 (10), H422-H425 (2011). 10.1149/1.3617442
- (2011) Electrochem. Solid-State Lett. , vol.14 , Issue.10
- Zhang, F.¹ Gan, X.² Li, X.³ Wu, L.⁴ Gao, X.⁵ Zheng, R.⁶ He, Y.⁷ Liu, X.⁸ Yang, R.⁹

17
- 80054015300
- 10.1002/smll.201101157
- C. Cagli, F. Nardi, B. Harteneck, Z. K. Tan, Y. G. Zhang, and D. Ielmini, Small 7 (20), 2899-2905 (2011). 10.1002/smll.201101157
- (2011) Small , vol.7 , Issue.20 , pp. 2899-2905
- Cagli, C.¹ Nardi, F.² Harteneck, B.³ Tan, Z.K.⁴ Zhang, Y.G.⁵ Ielmini, D.⁶

18
- 84863351077
- 10.1088/0957-4484/23/14/145201
- I.-C. Yao, D.-Y. L. Lee, T.-Y. Tseng, and P. Lin, Nanotechnology 23, 145201 (2012). 10.1088/0957-4484/23/14/145201
- (2012) Nanotechnology , vol.23 , pp. 145201
- Yao, I.-C.¹ Lee, D.-Y.L.² Tseng, T.-Y.³ Lin, P.⁴

19
- 0036284751
- 10.1016/S0370-1573(02)00009-1
- C. Teichert, Phys. Rep.-Rev. Sec. Phys. Lett. 365, 335-432 (2002). 10.1016/S0370-1573(02)00009-1
- (2002) Phys. Rep.-Rev. Sec. Phys. Lett. , vol.365 , pp. 335-432
- Teichert, C.¹

20
- 84863236872
- 10.1021/nn204809a
- J. Qi, M. Olmedo, J. J. Ren, N. Zhan, J. Z. Zhao, J. G. Zheng, and J. L. Liu, ACS Nano 6 (2), 1051-1058 (2012). 10.1021/nn204809a
- (2012) ACS Nano , vol.6 , Issue.2 , pp. 1051-1058
- Qi, J.¹ Olmedo, M.² Ren, J.J.³ Zhan, N.⁴ Zhao, J.Z.⁵ Zheng, J.G.⁶ Liu, J.L.⁷

21
- 84864232842
- B. Gao, J. F. Kang, Y. S. Chen, F. F. Zhang, B. Chen, P. Huang, L. F. Liu, X. Y. Liu, Y. Y. Wang, X. A. Tran, Z. R. Wang, H. Y. Yu, and A. Chin, Tech. Dig. - Int. Electron Devices Meet. 2011, 417-420.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2011 , pp. 417-420
- Gao, B.¹ Kang, J.F.² Chen, Y.S.³ Zhang, F.F.⁴ Chen, B.⁵ Huang, P.⁶ Liu, L.F.⁷ Liu, X.Y.⁸ Wang, Y.Y.⁹ Tran, X.A.¹⁰ Wang, Z.R.¹¹ Yu, H.Y.¹² Chin, A.¹³

22
- 77954144619
- 10.1109/LED.2010.2048886
- M. J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S. E. Ahn, M. Chang, Y. B. Kim, U. I. Chung, C. J. Kim, D. S. Kim, and H. Lee, IEEE Electron Device Lett. 31 (7), 725-727 (2010). 10.1109/LED.2010.2048886
- (2010) IEEE Electron Device Lett. , vol.31 , Issue.7 , pp. 725-727
- Lee, M.J.¹ Lee, C.B.² Lee, D.³ Lee, S.R.⁴ Hur, J.⁵ Ahn, S.E.⁶ Chang, M.⁷ Kim, Y.B.⁸ Chung, U.I.⁹ Kim, C.J.¹⁰ Kim, D.S.¹¹ Lee, H.¹²

23
- 78649340782
- 10.1109/JPROC.2010.2070830
- H. Akinaga and H. Shima, Proc. IEEE 98 (12), 2237-2251 (2010). 10.1109/JPROC.2010.2070830
- (2010) Proc. IEEE , vol.98 , Issue.12 , pp. 2237-2251
- Akinaga, H.¹ Shima, H.²

24
- 68249108599
- 10.1063/1.3193656
- W.-Y. Chang, K.-J. Cheng, J.-M. Tsai, H.-J. Chen, F. Chen, M.-J. Tsai, and T.-B. Wu, Appl. Phys. Lett. 95 (4), 042104 (2009). 10.1063/1.3193656
- (2009) Appl. Phys. Lett. , vol.95 , Issue.4 , pp. 042104
- Chang, W.-Y.¹ Cheng, K.-J.² Tsai, J.-M.³ Chen, H.-J.⁴ Chen, F.⁵ Tsai, M.-J.⁶ Wu, T.-B.⁷

25
- 74249119926
- 10.1149/1.3267050
- S. Yu, B. Gao, H. Dai, B. Sun, L. Liu, X. Liu, R. Han, J. Kang, and B. Yu, Electrochem. Solid-State Lett. 13 (2), H36-H38 (2010). 10.1149/1.3267050
- (2010) Electrochem. Solid-State Lett. , vol.13 , Issue.2
- Yu, S.¹ Gao, B.² Dai, H.³ Sun, B.⁴ Liu, L.⁵ Liu, X.⁶ Han, R.⁷ Kang, J.⁸ Yu, B.⁹

26
- 77956736956
- 10.1143/APEX.3.091101
- J. Song, A. I. Inamdar, B. Jang, K. Jeon, Y. Kim, K. Jung, H. Im, W. Jung, H. Kim, and J. P. Hong, Appl. Phys. Express 3, 091101 (2010). 10.1143/APEX.3.091101
- (2010) Appl. Phys. Express , vol.3 , pp. 091101
- Song, J.¹ Inamdar, A.I.² Jang, B.³ Jeon, K.⁴ Kim, Y.⁵ Jung, K.⁶ Im, H.⁷ Jung, W.⁸ Kim, H.⁹ Hong, J.P.¹⁰

27
- 78951482667
- 10.1149/1.3531843
- Y.-T. Tsai, T.-C. Chang, C.-C. Lin, S.-C. Chen, C.-W. Chen, S. M. Sze, F.-S. Yeh, and T.-Y. Tseng, Electrochem. Solid-State Lett. 14 (3), H135-H138 (2011). 10.1149/1.3531843
- (2011) Electrochem. Solid-State Lett. , vol.14 , Issue.3
- Tsai, Y.-T.¹ Chang, T.-C.² Lin, C.-C.³ Chen, S.-C.⁴ Chen, C.-W.⁵ Sze, S.M.⁶ Yeh, F.-S.⁷ Tseng, T.-Y.⁸

28
- 57349143757
- 10.1063/1.3039079
- W. H. Guan, M. Liu, S. B. Long, Q. Liu, and W. Wang, Appl. Phys. Lett. 93 (22), 223506 (2008). 10.1063/1.3039079
- (2008) Appl. Phys. Lett. , vol.93 , Issue.22 , pp. 223506
- Guan, W.H.¹ Liu, M.² Long, S.B.³ Liu, Q.⁴ Wang, W.⁵

29
- 77952993659
- 10.1063/1.3429024
- H. H. Huang, W. C. Shih, and C. H. Lai, Appl. Phys. Lett. 96 (19), 193505 (2010). 10.1063/1.3429024
- (2010) Appl. Phys. Lett. , vol.96 , Issue.19 , pp. 193505
- Huang, H.H.¹ Shih, W.C.² Lai, C.H.³

30
- 0005656995
- 10.1063/1.121004
- O. Jessensky, F. Muller, and U. Gosele, Appl. Phys. Lett. 72 (10), 1173-1175 (1998). 10.1063/1.121004
- (1998) Appl. Phys. Lett. , vol.72 , Issue.10 , pp. 1173-1175
- Jessensky, O.¹ Muller, F.² Gosele, U.³

31
- 19944411848
- 10.1021/ic0500917
- H. P. Liang, Y. G. Guo, J. S. Hu, C. F. Zhu, L. J. Wan, and C. L. Bai, Inorg. Chem. 44 (9), 3013-3015 (2005). 10.1021/ic0500917
- (2005) Inorg. Chem. , vol.44 , Issue.9 , pp. 3013-3015
- Liang, H.P.¹ Guo, Y.G.² Hu, J.S.³ Zhu, C.F.⁴ Wan, L.J.⁵ Bai, C.L.⁶

32
- 36549083365
- 10.1002/adma.200700251
- M. J. Lee, Y. Park, D. S. Suh, E. H. Lee, S. Seo, D. C. Kim, R. Jung, B. S. Kang, S. E. Ahn, C. B. Lee, D. H. Seo, Y. K. Cha, I. K. Yoo, J. S. Kim, and B. H. Park, Adv. Mater. 19 (22), 3919-3923 (2007). 10.1002/adma.200700251
- (2007) Adv. Mater. , vol.19 , Issue.22 , pp. 3919-3923
- Lee, M.J.¹ Park, Y.² Suh, D.S.³ Lee, E.H.⁴ Seo, S.⁵ Kim, D.C.⁶ Jung, R.⁷ Kang, B.S.⁸ Ahn, S.E.⁹ Lee, C.B.¹⁰ Seo, D.H.¹¹ Cha, Y.K.¹² Yoo, I.K.¹³ Kim, J.S.¹⁴ Park, B.H.¹⁵

33
- 21044457267
- 10.1063/1.1872217
- S. Seo, M. J. Lee, D. H. Seo, S. K. Choi, D. S. Suh, Y. S. Joung, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim, and B. H. Park, Appl. Phys. Lett. 86 (9), 093509 (2005). 10.1063/1.1872217
- (2005) Appl. Phys. Lett. , vol.86 , Issue.9 , pp. 093509
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Choi, S.K.⁴ Suh, D.S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Byun, I.S.⁸ Hwang, I.R.⁹ Kim, S.H.¹⁰ Park, B.H.¹¹

34
- 84862939610
- 10.1039/c1jm14592d
- S.-H. Lyu and J.-S. Lee, J. Mater. Chem. 22, 1852-1861 (2012). 10.1039/c1jm14592d
- (2012) J. Mater. Chem. , vol.22 , pp. 1852-1861
- Lyu, S.-H.¹ Lee, J.-S.²

35
- 84859218369
- 10.1109/TED.2012.2184545
- X. M. Guan, S. M. Yu, and H. S. P. Wong, IEEE Trans. Electron Devices 59 (4), 1172-1182 (2012). 10.1109/TED.2012.2184545
- (2012) IEEE Trans. Electron Devices , vol.59 , Issue.4 , pp. 1172-1182
- Guan, X.M.¹ Yu, S.M.² Wong, H.S.P.³

36
- 70549106464
- 10.1109/LED.2009.2032308
- B. Gao, B. Sun, H. W. Zhang, L. F. Liu, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, IEEE Electron Device Lett. 30 (12), 1326-1328 (2009). 10.1109/LED.2009.2032308
- (2009) IEEE Electron Device Lett. , vol.30 , Issue.12 , pp. 1326-1328
- Gao, B.¹ Sun, B.² Zhang, H.W.³ Liu, L.F.⁴ Liu, X.Y.⁵ Han, R.Q.⁶ Kang, J.F.⁷ Yu, B.⁸

37
- 84860477434
- 10.1143/JJAP.51.041102
- T. G. Seong, M. R. Joung, J. W. Sun, M. K. Yang, J. K. Lee, J. W. Moon, J. Roh, and S. Nahm, Jpn. J. Appl. Phys., Part 1 51 (4), 041102 (2012). 10.1143/JJAP.51.041102
- (2012) Jpn. J. Appl. Phys., Part 1 , vol.51 , Issue.4 , pp. 041102
- Seong, T.G.¹ Joung, M.R.² Sun, J.W.³ Yang, M.K.⁴ Lee, J.K.⁵ Moon, J.W.⁶ Roh, J.⁷ Nahm, S.⁸

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