Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 725-727

  Lee, Myoung Jae ^a   Lee, Chang Bum ^a   Lee, Dongsoo ^a   Lee, Seung Ryul ^a   Hur, Jihyun ^a   Ahn, Seung Eon ^a   Chang, Man ^a   Kim, Young Bae ^a   Chung, U In ^a   Kim, Chang Jung ^a   Kim, Dong Sik ^b   Lee, Hosun ^c  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Inha Technical College   (South Korea)

^c Kyung Hee University   (South Korea)

Author keywords

Nonvolatile memory; resistance switching

Indexed keywords

ALTERNATIVE APPROACH; BISTABLE RESISTANCE; LAYER DEPOSITION; MULTILAYER STRUCTURES; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OXYGEN CONTENT; OXYGEN PARTIAL PRESSURE; RESET CURRENTS; RESISTANCE SWITCHING; RESISTIVE SWITCHING; SWITCHING VOLTAGES; X RAY PHOTONS;

MULTILAYERS; NONVOLATILE STORAGE; OXYGEN;

SWITCHING;

EID: 77954144619     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2048886     Document Type: Article

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