Effects of ultrathin Al layer insertion on resistive switching performance in an amorphous aluminum oxide resistive memory

Applied Physics Express

Volumn 3, Issue 9, 2010, Pages

  Song, Jaehoon ^a   Inamdar, Akbar I ^a   Jang, ByeongUk ^a   Jeon, Kiyoung ^a   Kim, Young Sam ^a   Jung, Kyooho ^a   Kim, Yongmin ^a   Im, Hyunsik ^a   Jung, Woong ^a   Kim, Hyungsang ^a   Hong, J P ^b  

^a Dongguk University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; AMORPHOUS ALUMINUM OXIDE; DIELECTRIC BREAKDOWNS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; METALLIC CONDUCTION; MULTI-LAYERED; RESISTANCE STATE; RESISTANCE SWITCHING; RESISTIVE MEMORIES; RESISTIVE SWITCHING; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION; ULTRA-THIN;

DURABILITY; SWITCHING SYSTEMS;

ALUMINUM;

EID: 77956736956     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.091101     Document Type: Article

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