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Nanotechnology

Volumn 23, Issue 14, 2012, Pages

Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices

(4) Yao, I Chuan a Lee, Dai Ying a Tseng, Tseung Yuen a Lin, Pang a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTION METHODS; CONDUCTING FILAMENT; GA-DOPED ZNO; HIGH POTENTIAL; MOLAR RATIO; PREFERRED ORIENTATIONS; RESISTANCE RATIO; RESISTIVE MEMORIES; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORIES; SCANNING ELECTRON MICROSCOPIES (SEM); TRANSMISSION ELECTRON MICROSCOPY (TEM); WELL-ALIGNED;

DOPING (ADDITIVES); GALLIUM; GRAIN BOUNDARIES; SCANNING ELECTRON MICROSCOPY; SWITCHING SYSTEMS; THIN FILM DEVICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

NANORODS;

EID: 84863351077 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/23/14/145201 Document Type: Article

Times cited : (61)

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