Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device

Applied Physics Letters

Volumn 96, Issue 19, 2010, Pages

  Huang, Hsin Hung ^a   Shih, Wen Chieh ^a   Lai, Chih Huang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DEFECT DENSITIES; ION-BEAM SPUTTERING; LOW-RESISTANCE STATE; MEMORY DEVICE; MGO FILMS; NON-POLAR; NONVOLATILE MEMORY DEVICES; RESISTIVE SWITCHING; TEMPERATURE DEPENDENCE;

DEFECT DENSITY; FILAMENTS (LAMP); NONVOLATILE STORAGE; RAPID SOLIDIFICATION; SPUTTERING; SWITCHING SYSTEMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER ELECTRON SPECTROSCOPY;

EID: 77952993659     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3429024     Document Type: Article

References (19)

1. R. Waser and M. Aono, Nat. Mater. 6, 833 (2007). 10.1038/nmat2023 1476-1122 (Pubitemid 350064191)
2. K. H. Kim, S. H. Jo, S. Gaba, and W. Lu, Appl. Phys. Lett. APPLAB 0003-6951 96, 053106 (2010). 10.1063/1.3294625
3. M. J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S. E. Ahn, K. H. Kim, C. B. Lee, C. J. Kim, I. K. Yoo, D. H. Seo, X. S. Li, J. B. Park, J. H. Lee, and Y. Park, Nano Lett. NALEFD 1530-6984 9, 1476 (2009). 10.1021/nl803387q
4. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. APPLAB 0003-6951 92, 232112 (2008). 10.1063/1.2945278
5. T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. APPLAB 0003-6951 86, 012107 (2005). 10.1063/1.1845598 (Pubitemid 40211571)
6. Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. NALEFD 1530-6984 9, 1636 (2009). 10.1021/nl900006g
7. C. Yoshida, M. Kurasawa, Y. M. Lee, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. APPLAB 0003-6951 92, 113508 (2008). 10.1063/1.2898514 (Pubitemid 351422912)
8. J. M. Teixeira, J. Ventura, R. Fermento, J. P. Araujo, J. B. Sousa, P. Wisniowski, and P. P. Freitas, J. Phys. D JPAPBE 0022-3727 42, 105407 (2009). 10.1088/0022-3727/42/10/105407
9. P. Krzysteczko, G. Reiss, and A. Thomas, Appl. Phys. Lett. APPLAB 0003-6951 95, 112508 (2009). 10.1063/1.3224193
10. D. D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, and K. Ando, Appl. Phys. Lett. APPLAB 0003-6951 86, 092502 (2005). 10.1063/1.1871344 (Pubitemid 40495213)
11. J. J. Cha, J. C. Read, R. A. Buhrman, and D. A. Muller, Appl. Phys. Lett. APPLAB 0003-6951 91, 062516 (2007). 10.1063/1.2769753 (Pubitemid 47248599)
12. C. C. Lin, C. Y. Lin, M. H. Lin, C. H. Lin, and T. Y. Tseng, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 3146 (2007). 10.1109/TED.2007.908867 (Pubitemid 350225925)
13. C. Schindler, S. C. P. Thermadam, R. Waser, and M. N. Kozicki, IEEE Trans. Electron Devices IETDAI 0018-9383 54, 2762 (2007). 10.1109/TED.2007. 904402 (Pubitemid 47541876)
14. W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, Appl. Phys. Lett. APPLAB 0003-6951 93, 223506 (2008). 10.1063/1.3039079
15. I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, Phys. Rev. B PRBMDO 0163-1829 77, 035105 (2008). 10.1103/PhysRevB.77.035105
16. S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. W. Kim, C. U. Jung, S. Seo, M. J. Lee, and T. W. Noh, Adv. Mater. ADVMEW 0935-9648 20, 1154 (2008). 10.1002/adma.200702024
17. H. H. Huang, C. A. Yang, P. H. Huang, C. H. Lai, T. S. Chin, H. E. Huang, H. Y. Bor, and R. T. Huang, J. Appl. Phys. JAPIAU 0021-8979 101, 09H116 (2007). 10.1063/1.2713210 (Pubitemid 46753331)
18. E. Miranda, E. O'Connor, K. Cherkaoui, S. Monaghan, R. Long, D. O'Connell, P. K. Hurley, G. Hughes, and P. Casey, Appl. Phys. Lett. APPLAB 0003-6951 95, 012901 (2009). 10.1063/1.3167827
19. P. Renucci, L. Gaudart, J. P. Petrakian, and D. Roux, Thin Solid Films THSFAP 0040-6090 130, 75 (1985). 10.1016/0040-6090(85)90297-4 (Pubitemid 16492590)