A temperature-accelerated method to evaluate data retention of resistive switching nonvolatile memory

IEEE Electron Device Letters

Volumn 29, Issue 1, 2008, Pages 38-40

  Chen, An ^a   Haddad, Sameer ^a   Wu, Yi Ching ^a  

^a Submicron Development Center   (United States)

Author keywords

Nonvolatile memory; Resistive random access memory (RRAM); Retention; Trapping

Indexed keywords

MIM DEVICES; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE;

DATA RETENTION; NONVOLATILE MEMORY; RESISTIVE RANDOM ACCESS MEMORY; TRAPPING;

NONVOLATILE STORAGE;

EID: 37549005538     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.910753     Document Type: Article

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