Current transport mechanism in high-κ cerium oxide gate dielectrics grown on germanium substrates

Electrochemical and Solid-State Letters

Volumn 12, Issue 5, 2009, Pages

  Rahman, M S ^a   Evangelou, E K ^a   Androulidakis, I I ^a   Dimoulas, A ^b  

^a UNIVERSITY OF IOANNINA   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CERIUM; CERIUM COMPOUNDS; ELECTRIC FIELDS; GATES (TRANSISTOR); GERMANIUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON SOLAR CELLS;

BARRIER HEIGHTS; CERIUM OXIDES; CURRENT CONDUCTION MECHANISMS; CURRENT TRANSPORT MECHANISMS; DOMINANT MECHANISMS; GATE CURRENTS; GATE VOLTAGES; GERMANIUM SUBSTRATES; METAL-OXIDE SEMICONDUCTORS; POOLE-FRANKEL; POOLE-FRENKEL CONDUCTIONS; SCHOTTKY EMISSIONS; TRAP ENERGY LEVELS;

GATE DIELECTRICS;

EID: 62549149024     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3086259     Document Type: Article

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