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Volumn 3, Issue 2, 2011, Pages 222-225

Temperature dependence of resistive switching in aluminum/anodized aluminum film structure

Author keywords

Anodized Aluminum Thin Film; Current Transport; Resistance Random Access Memory; Resistive Switching; Temperature Dependence

Indexed keywords

ANODIZED ALUMINUM; CURRENT TRANSPORT; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; TEMPERATURE DEPENDENCE;

ALUMINUM; EXCITED STATES; OPTICAL FILMS; SWITCHING; SWITCHING SYSTEMS; TEMPERATURE DISTRIBUTION; THIN FILMS;

RANDOM ACCESS STORAGE;

EID: 79952714376 PISSN: 19414900 EISSN: 19414919 Source Type: Journal
DOI: 10.1166/nnl.2011.1157 Document Type: Conference Paper

Times cited : (4)

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