Bistable resistance memory switching effect in amorphous InGaZnO thin films

Applied Physics Letters

Volumn 97, Issue 6, 2010, Pages

  Kim, C H ^a   Jang, Y H ^a   Hwang, H J ^a   Song, C H ^a   Yang, Y S ^a   Cho, J H ^a  

^a Pusan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLE RESISTANCE; CONDUCTING PATHS; ELECTRICAL PROPERTY; MATRIX; MEMORY SWITCHING; OXYGEN PARTIAL PRESSURE; OXYGEN VACANCY DEFECTS; PULSED LASER; RESISTANCE SWITCHING EFFECT;

AMORPHOUS FILMS; DEPOSITION; ELECTRIC PROPERTIES; OXYGEN; OXYGEN VACANCIES; PLATINUM; PULSED LASER DEPOSITION; PULSED LASERS; SWITCHING; SWITCHING SYSTEMS; THIN FILMS; VACANCIES; VAPOR DEPOSITION;

PRESSURE EFFECTS;

EID: 77955741062     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3479527     Document Type: Article

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