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Volumn 97, Issue 5, 2010, Pages

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

(14) Hwang, Inrok a Lee, Myung Jae b Buh, Gyoung Ho c Bae, Jieun a Choi, Jinsik a Kim, Jin Soo a Hong, Sahwan a Kim, Yeon Soo a Byun, Ik Su a Lee, Seung Woong a Ahn, Seung Eon b Kang, Bo Soo d Kang, Sung Oong a Park, Bae Ho a

a Konkuk University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

c Korean Intellectural Property Office (South Korea)

d Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BISTABLE MEMORY; COMPOSITIONAL DIFFERENCE; ELECTRICAL PROPERTY; ELECTRICAL PULSE; MONOSTABLE; OXYGEN IONS; RESISTIVE SWITCHING; SWITCHING TRANSITIONS; THRESHOLD SWITCHING; VOLTAGE PULSE;

ELECTRIC POTENTIAL; OXYGEN;

SWITCHING;

EID: 77955744722 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3477953 Document Type: Article

Times cited : (73)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.