SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 9, 2009, Pages

Resistive switching in aluminum/anodized aluminum film structure without forming process

(6) Zhu, W a Chen, T P a Liu, Z a Yang, M a Liu, Y b Fung, S c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

c UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM FILM; ANODIZATIONS; ANODIZING ALUMINUM; CONDUCTIVE FILAMENTS; ELECTRON HOPPING; FORMING PROCESS; HIGH RESISTANCE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; METAL-INSULATOR-METAL STRUCTURES; METALLIC CONDUCTION; MIM STRUCTURE; OHMIC BEHAVIOR; RESISTANCE STATE; RESISTIVE SWITCHING;

METAL INSULATOR BOUNDARIES; METALLIC FILMS; MIM DEVICES; STRUCTURAL METALS; SWITCHING SYSTEMS;

ALUMINUM;

EID: 70450260461 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3253722 Document Type: Article

Times cited : (43)

References (11)

1
- 60349087905
- 10.1063/1.3081401
- D. Ielmini, C. Cagli, and F. Nardi, Appl. Phys. Lett. 94, 063511 (2009). 10.1063/1.3081401
- (2009) Appl. Phys. Lett. , vol.94 , pp. 063511
- Ielmini, D.¹ Cagli, C.² Nardi, F.³

2
- 33646885556
- Electrical observations of filamentary conductions for the resistive memory switching in NiO films
- DOI 10.1063/1.2204649
- D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, and I. K. Yoo, Appl. Phys. Lett. 88, 202102 (2006). 10.1063/1.2204649 (Pubitemid 43781782)
- (2006) Applied Physics Letters , vol.88 , Issue.20 , pp. 202102
- Kim, D.C.¹ Seo, S.² Ahn, S.E.³ Suh, D.-S.⁴ Lee, M.J.⁵ Park, B.-H.⁶ Yoo, I.K.⁷ Baek, I.G.⁸ Kim, H.-J.⁹ Yim, E.K.¹⁰ Lee, J.E.¹¹ Park, S.O.¹² Kim, H.S.¹³ Chung, U.-I.¹⁴ Moon, J.T.¹⁵ Ryu, B.I.¹⁶

3
- 19944434155
- Reproducible resistance switching in polycrystalline NiO films
- DOI 10.1063/1.1831560
- S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, and I. K. Yoo, Appl. Phys. Lett. 85, 5655 (2004). 10.1063/1.1831560 (Pubitemid 40162553)
- (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5655-5657
- Seo, S.¹ Lee, M.J.² Seo, D.H.³ Jeoung, E.J.⁴ Suh, D.-S.⁵ Joung, Y.S.⁶ Yoo, I.K.⁷ Hwang, I.R.⁸ Kim, S.H.⁹ Byun, I.S.¹⁰ Kim, J.-S.¹¹ Choi, J.S.¹² Park, B.H.¹³

4
- 59849099356
- 10.1109/TED.2008.2010583
- U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 56, 186 (2009). 10.1109/TED.2008.2010583
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 186
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

5
- 33750428912
- 2/Ru stacked structures
- DOI 10.1149/1.2353899
- K. M. Kim, B. J. Choi, B. W. Koo, S. Choi, D. S. Jeong, and C. S. Hwang, Electrochem. Solid-State Lett. 9, G343 (2006). 10.1149/1.2353899 (Pubitemid 44652658)
- (2006) Electrochemical and Solid-State Letters , vol.9 , Issue.12 , pp. 343-346
- Kim, K.M.¹ Choi, B.J.² Koo, B.W.³ Choi, S.⁴ Jeong, D.S.⁵ Hwang, C.S.⁶

6
- 22144448904
- 2 thin films
- DOI 10.1063/1.1968416, 262907
- C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J.-S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 86, 262907 (2005). 10.1063/1.1968416 (Pubitemid 40983220)
- (2005) Applied Physics Letters , vol.86 , Issue.26 , pp. 1-3
- Rohde, C.¹ Choi, B.J.² Jeong, D.S.³ Choi, S.⁴ Zhao, J.-S.⁵ Hwang, C.S.⁶

7
- 34247877733
- Reproducible unipolar resistance switching in stoichiometric Zr O2 films
- DOI 10.1063/1.2734900
- X. Wu, P. Zhou, J. Li, L. Y. Chen, H. B. Lv, Y. Y. Lin, and T. A. Tang, Appl. Phys. Lett. 90, 183507 (2007). 10.1063/1.2734900 (Pubitemid 46701225)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 183507
- Wu, X.¹ Zhou, P.² Li, J.³ Chen, L.Y.⁴ Lv, H.B.⁵ Lin, Y.Y.⁶ Tang, T.A.⁷

8
- 41749100369
- 10.1109/LED.2008.917109
- H. B. Lv, M. Yin, X. F. Fu, Y. L. Song, L. Tang, P. Zhou, C. H. Zhao, T. A. Tang, B. A. Chen, and Y. Y. Lin, IEEE Electron Device Lett. 29, 309 (2008). 10.1109/LED.2008.917109
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 309
- Lv, H.B.¹ Yin, M.² Fu, X.F.³ Song, Y.L.⁴ Tang, L.⁵ Zhou, P.⁶ Zhao, C.H.⁷ Tang, T.A.⁸ Chen, B.A.⁹ Lin, Y.Y.¹⁰

9
- 44849128158
- 10.1063/1.2939555
- S. Kim and Y. K. Choi, Appl. Phys. Lett. 92, 223508 (2008). 10.1063/1.2939555
- (2008) Appl. Phys. Lett. , vol.92 , pp. 223508
- Kim, S.¹ Choi, Y.K.²

10
- 20544436221
- 3 memory film
- DOI 10.1109/LED.2005.848073
- C. Y. Liu, P. H. Wu, A. Wang, W. Y. Jang, J. C. Young, K. Y. Chiu, and T. Y. Tseng, IEEE Electron Device Lett. 26, 351 (2005). 10.1109/LED.2005.848073 (Pubitemid 40843785)
- (2005) IEEE Electron Device Letters , vol.26 , Issue.6 , pp. 351-353
- Liu, C.-Y.¹ Wu, P.-H.² Wang, A.³ Jang, W.-Y.⁴ Young, J.-C.⁵ Chiu, K.-Y.⁶ Tseng, T.-Y.⁷

11
- 33748484256
- 3 memory films
- DOI 10.1109/LED.2006.880660
- C.-C. Lin, B.-C. Tu, C.-C. Lin, and C.-H. Lin, IEEE Electron Device Lett. 27, 725 (2006). 10.1109/LED.2006.880660 (Pubitemid 44355888)
- (2006) IEEE Electron Device Letters , vol.27 , Issue.9 , pp. 725-727
- Lin, C.-C.¹ Tu, B.-C.² Lin, C.-C.³ Lin, C.-H.⁴ Tseng, T.-Y.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.