Improvement of resistive switching in Cux using new RESET mode

IEEE Electron Device Letters

Volumn 29, Issue 7, 2008, Pages 681-683

  Yin, M ^a   Zhou, P ^a   Lv, H B ^a   Xu, J ^a   Song, Y L ^a   Fu, X F ^a   Tang, T A ^a   Chen, B A ^a   Lin, Y Y ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

CuxO; Endurance; Nonvolatile memory; Resistive switching

Indexed keywords

RANDOM ACCESS STORAGE;

MEMORY SWITCHING; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING;

COPPER;

EID: 47249123056     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923319     Document Type: Article

References (9)

1. 2," Appl. Phys. Lett., vol. 88, no. 23, p. 232 106, Jun. 2006.
2. 2 film memory devices," IEEE Electron Device Lett., vol. 28, no. 5, pp. 366-368, May 2007.
3. x O films for nonvolatile memory application," IEEE Electron Device Lett., vol. 29, no. 4, pp. 309-311, Apr. 2008.
4. Y. Hosoi, Y. Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T. Nakano, S. Ohnishi, N. Awaya, I. H. Inoue, H. Shima, H. Akinaga, H. Takagi, H. Alkoh, and Y. Tokura, "High speed unipolar switching resistance RAM (RRAM) technology," in IEDM Tech. Dig., 2006, p. 30.7.
5. T. Ishii, K. Yano, T. Sano, T. Mine, F. Murai, and K. Seki, "Verify: Key to the stable single-electron-memory operation," in IEDM Tech. Dig., 1997, pp.171-174.
6. D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, "Electrical observations of filamentary conductions for the resistive memory switching in NiO films," Appl. Phys. Lett., vol. 88, no. 20, p. 202 102, May 2006.
7. Y. Sato, K. Kinoshita, M. Aoki, and Y. Sugiyama, "Consideration of switching mechatvism of binary metal oxide resistive junctions using a thermal reaction model," Appl. Phys. Lett., vol. 90, no. 3, p. 033 503, Jan. 2007.
8. 2 thin films," Appl. Phys. Lett., vol. 86, no. 26, p. 262 907, Jun. 2005.
9. 2 thin films," Appl. Phys. Lett., vol. 89, no. 1, p. 012 906, Jul. 2006.