Degradation analysis and characterization of multifilamentary conduction patterns in high-field stressed atomic-layer-deposited TiO 2/Al 2O 3 nanolaminates on GaAs

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Miranda, E ^a   Sune J ^a   Das, T ^b   Mahata, C ^b   Maiti, C K ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CONDUCTION PATHS; CONDUCTION PATTERNS; CONSTANT VOLTAGE STRESS; DEGRADATION ANALYSIS; DIELECTRIC DEGRADATION; DISTANCE HISTOGRAM; ELECTRICAL STRESS; GAAS; HIGH PERMITTIVITY OXIDES; HIGH-FIELD; HYSTERETIC BEHAVIOR; INSULATING FILM; INTENSITY PLOT; METAL ELECTRODES; MULTIFILAMENTARY; NANO-LAMINATES; P-TYPE GAAS; PAIR CORRELATION FUNCTIONS; POSITIVE BIAS; RESISTIVE SWITCHING MECHANISMS; SPATIAL STATISTICS; SPOT PATTERN; TIO; VOLTAGE SWEEP;

ATOMIC LAYER DEPOSITION; ELECTROLYTIC CAPACITORS; GALLIUM ARSENIDE; OXIDE FILMS; TITANIUM DIOXIDE;

ALUMINUM;

EID: 84867068866     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754510     Document Type: Article

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