메뉴 건너뛰기




Volumn , Issue , 2010, Pages 775-777

Analysis of the breakdown spots spatial distribution in large area MOS structures

Author keywords

Breakdown; High ; MOS; Reliability

Indexed keywords

BREAKDOWN; BREAKDOWN SPOTS; DIELECTRIC LAYER; MATHEMATICAL TOOLS; MOS; MOS STRUCTURE; POINT PATTERN ANALYSIS; POISSON PROCESS; RELIABILITY TECHNIQUES; SPATIAL DISTRIBUTION;

EID: 77957912912     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488734     Document Type: Conference Paper
Times cited : (14)

References (12)
  • 1
    • 56549126653 scopus 로고    scopus 로고
    • Theory of breakdown position determination by voltage- and current-ratio methods
    • M. Alam, D. Varghese, and B. Kaczer, "Theory of breakdown position determination by voltage- and current-ratio methods", IEEE Trans Elect Dev 55, 3150 (2008)
    • (2008) IEEE Trans Elect Dev , vol.55 , pp. 3150
    • Alam, M.1    Varghese, D.2    Kaczer, B.3
  • 3
    • 0038309961 scopus 로고    scopus 로고
    • A phenomenological theory of correlated multiple soft-breakdown events in ultra-thin gate dielectrics
    • M. Alam and R. Smith, "A phenomenological theory of correlated multiple soft-breakdown events in ultra-thin gate dielectrics", Proc. IRPS 2003, p. 406
    • (2003) Proc. IRPS , pp. 406
    • Alam, M.1    Smith, R.2
  • 4
    • 0038443506 scopus 로고    scopus 로고
    • Statistics of successive breakdown events in gate oxides
    • J. Suñé and E. Wu, "Statistics of successive breakdown events in gate oxides", IEEE Elect Dev Lett 24, 272 (2003)
    • (2003) IEEE Elect Dev Lett , vol.24 , pp. 272
    • Suñé, J.1    Wu, E.2
  • 5
    • 0000840926 scopus 로고    scopus 로고
    • Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors
    • S. Lombardo, F. Crupi, A. La Magna, C. Spinella, A. Terrasi, and A. La Mantia, "Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors", J Appl Phys 84, 472 (1998)
    • (1998) J Appl Phys , vol.84 , pp. 472
    • Lombardo, S.1    Crupi, F.2    La Magna, A.3    Spinella, C.4    Terrasi, A.5    La Mantia, A.6
  • 6
    • 0033731870 scopus 로고    scopus 로고
    • Ultra-thin oxide reliability for ULSI applications
    • E. Wu, J. Stathis, and L. Hanet, "Ultra-thin oxide reliability for ULSI applications", Semicond Sci Technol 15, 425 (2000)
    • (2000) Semicond Sci Technol , vol.15 , pp. 425
    • Wu, E.1    Stathis, J.2    Hanet, L.3
  • 7
    • 13444262053 scopus 로고    scopus 로고
    • Spatstat: An R package for analyzing spatial point patterns
    • A. Baddeley and R. Turner, "Spatstat: An R Package for Analyzing Spatial Point Patterns", J Stat Software 12, 1 (2005)
    • (2005) J Stat Software , vol.12 , pp. 1
    • Baddeley, A.1    Turner, R.2
  • 8
    • 51749095891 scopus 로고    scopus 로고
    • A. Dimoulas, E. Gusev, P. McIntyre, and M. Heyns (Eds.) Springer
    • A. Dimoulas, E. Gusev, P. McIntyre, and M. Heyns (Eds.), in Advanced gate stacks for high-mobility semiconductors, Springer, 2007
    • (2007) Advanced Gate Stacks for High-Mobility Semiconductors
  • 11
    • 0025577128 scopus 로고
    • Enhanced degradation of oxide breakdown in the peripheral region by metallic contamination
    • H. Uchida, I. Aikawa, N. Hirashita, T. Ajioka, "Enhanced degradation of oxide breakdown in the peripheral region by metallic contamination", Proc. IEDM 1990, p. 405
    • (1990) Proc. IEDM , pp. 405
    • Uchida, H.1    Aikawa, I.2    Hirashita, N.3    Ajioka, T.4
  • 12
    • 24144456541 scopus 로고    scopus 로고
    • Layout dependency induced deviation from poisson area scaling in BEOL dielectric reliability
    • Y. Li, Zz. Tokei, Ph. Roussel, G. Groeseneken, and K Maex, "Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability", Mic Rel 45, 1299 (2005)
    • (2005) Mic Rel , vol.45 , pp. 1299
    • Li, Y.1    Tokei, Zz.2    Roussel, Ph.3    Groeseneken, G.4    Maex, K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.