Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks

Microelectronics Reliability

Volumn 49, Issue 9-11, 2009, Pages 1052-1055

  Miranda, E ^a   Martin Martinez, J ^a   O'Connor, E ^b   Hughes, G ^c   Casey, P ^c   Cherkaoui, K ^b   Monaghan, S ^b   Long, R ^b   O'Connell, D ^b   Hurley, P K ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION DYNAMICS; ELECTRICAL STRESS; HARD BREAKDOWN; INP; MAGNESIUM OXIDES; METAL OXIDES; P-TYPE; POST-BREAKDOWN CURRENT; POWER LAW MODEL; RESISTIVE SWITCHING; SOFT BREAKDOWN; VOLTAGE DEPENDENCE; VOLTAGE RANGES;

DEGRADATION; ELECTRIC POTENTIAL; FAILURE ANALYSIS; INDIUM PHOSPHIDE; MAGNESIUM; SILICON COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69249217766     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.06.017     Document Type: Article

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