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Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1295-1297

Model for the leakage current decay in high-field stressed Al/HfYO x/GaAs structures

(4) Miranda, E a Mahata, C b Das, T b Maiti, C K b

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

Curie von Schweidler law; MIS; Oxide degradation

Indexed keywords

CONSTANT VOLTAGE STRESS; CURIE-VON SCHWEIDLER LAW; CURRENT-TIME CHARACTERISTICS; DIELECTRIC DEGRADATION; HIGH-FIELD; METAL INSULATORS; OXIDE DEGRADATION; PARALLEL RESISTANCE; POWER-LAW;

DEGRADATION; DIELECTRIC MATERIALS; GALLIUM ARSENIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 79958076310 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.139 Document Type: Conference Paper

Times cited : (1)

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