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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Current instabilities in rare-earth oxides- HfO2 gate stacks grown on germanium based metal-oxide-semiconductor devices due to Maxwell-Wagner instabilities and dielectrics relaxation

(5) Rahman, M S a,b Evangelou, E K b Dimoulas, A c Mavrou, G c Galata, S c

a UNIVERSITY OF IOANNINA (Greece)

b Laboratory of Electronics Telecoms and Applications (Greece)

c INSTITUTE OF MATERIALS SCIENCE (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DIELECTRIC RELAXATION; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOGIC GATES; METALS; MOS DEVICES; RARE EARTHS; SEMICONDUCTING GERMANIUM; TRANSISTORS;

CAPACITANCE VOLTAGE; CHARGE ACCUMULATION; CONSTANT VOLTAGE STRESS; CURRENT DECAY; CURRENT INSTABILITY; GATE STACKS; RARE EARTH OXIDE; RELAXATION EFFECT;

OXIDE SEMICONDUCTORS;

EID: 79551618779 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3532946 Document Type: Conference Paper

Times cited : (5)

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