Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2188-2193

  Marcon, D ^a   Viaene, J ^a   Favia, P ^a   Bender, H ^a   Kang, X ^a   Lenci, S ^a   Stoffels, S ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ALGAN; ALGAN LAYERS; ALGAN/GAN HEMTS; CRITICAL VOLTAGES; CRYSTALLOGRAPHIC DEFECTS; CURRENT INCREASE; DEGRADATION MODEL; DEVICE DEGRADATION; DRAIN ELECTRODES; GATE LEAKAGES; GATE-LEAKAGE CURRENT; HIGH VOLTAGE; HIGH-POWER STRESS; INVERSE PIEZOELECTRIC EFFECTS; OUTPUT CURRENT; STEP-STRESS;

DROPS; EXPERIMENTS; GALLIUM NITRIDE; LEAKAGE (FLUID); LEAKAGE CURRENTS; PIEZOELECTRICITY;

DRAIN CURRENT;

EID: 84866743418     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.052     Document Type: Article

References (23)

1. G. Meneghesso, M. Meneghini, A. Tazzoli, N. Ronchi, A. Stocco, and A. Chini Int J Microwave Wireless Technol 2 2010 39 50
2. J.A. del Alamo, and J. Joh GaN HEMT reliability Microelectron Reliab 49 2009 1200 1206
3. J. Joh, F. Gao, T. Palacios, and J.A. del Alamo A model for the critical voltage for electrical degradation of GaN high electron mobility transistors Microelectron Reliab 50 2010 767 773
4. J. Joh, J.A. del Alamo, K. Langworthy, S. Xie, and T. Zheleva Role of stress voltage on structural degradation of GaN high-electron-mobility transistors Microelectron Reliab 51 2011 201 206
5. Joh J, del Alamo JA. Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors. In: IEEE international reliability physics symposium (IRPS); 2011. p. 4E.3.1-4E.3.4.
6. C.-Y. Chang, E.A. Douglas, J. Kim, L. Lu, C.-F. Lo, and B.-H. Chu Electric-field-driven degradation in OFF-state step-stressed AlGaN/GaN high-electron mobility transistors IEEE Trans Device Mater Reliab 11 2011 187 193
7. S.R. Lee, D.D. Koleske, K.C. Cross, J.A. Floro, K.E. Waldrip, and A.T. Wise In-situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures Appl Phys Lett 85 2004 6164 6167
8. Jimenez JL, Chowdhury U. X-band GaN FET reliability. In: IEEE international reliability physics symposium (IRPS); 2008. p. 429-35.
9. S.Y. Park, C. Floresca, U. Chowdhury, J.L. Jimenez, C. Lee, and E. Beam Physical degradation of GaN HEMT devices under high drain bias reliability testing Microelectron Reliab 49 2009 478 483
10. E. Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanzieri, and M. Peroni Localized damage in AlGaN/GaN HEMTs induced by reverse-bias testing IEEE Electron Device Lett 30 7 2009 427 429
11. Marcon D, Kauerauf T, Medjdoub F, Das J, Van Hove M, Srivastava P, et al. A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs. In: IEEE international electron devices meeting (IEDM); 2010. p. 20.3.1-20.3.4.
12. P. Valizadeh, and D. Pavlidis Investigation of the impact of Al molefraction on the consequences of RF stress on AlxGa1-xN/GaN MODFETs IEEE Trans Electron Devices 52 2005 1933 1939
13. Jimenez J. GaN on SiC degradation modes and reliability evaluation. Tutorial given at ESREF; 2011.
14. Christiansen BD, Coutu RA, Heller ER, Poling BS, David Via G, Vetury R, Shealy JB. Reliability testing of AlGaN/GaN HEMTs under multiple stressors. In: IEEE international reliability physics symposium (IRPS); 2011. p. CD.2.1-2.5.
15. Hodge MD, Vetury R, Shealy JB. Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs. In: IEEE international reliability physics symposium (IRPS); 2012. p. 3D.2.1-2.6.
16. E.A. Douglas, C.Y. Chang, B.P. Gila, M.R. Holzworth, K.S. Jones, and L. Liub Investigation of the effect of temperature during off-state degradation of AlGaN/GaN high electron mobility transistors Microelectron Reliab 52 2012 23 28
17. L. Li, J. Joh, J.A. del Alamo, and C.V. Thompson Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors Appl Phys Lett 100 2012 172109
18. Dammann M, Baeumler M, Gütle F, Cäsar M, Walcher H, Waltereit P, et al. Reliability and degradation mechanism of 0.25 μm AlGaN/GaN HEMTs under RF stress condition. In: IEEE internationals integrated reliability workshop (IIRW); 2011. p. 42-6.
19. A. Terano, T. Tsuchiya, and K. Mochizuki Investigation of relationship between 2DEG density and reverse leakage current in AlGaN/GaN schottky barrier diodes Electron Lett 48 2012 274 275
20. F. Gao, B. Lu, L. Li, S. Kaun, J. Speck, and C.V. Thompson Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors Appl Physic Lett 99 2011 223506
21. D. Marcon, X. Kang, J. Viaene, M. Van Hove, P. Srivastava, and S. Decoutere GaN-based HEMTs tested under high temperature storage test Microelectron Reliab 51 2011 1717 1720
22. 4 cap layer. In: IEEE international reliability physics symposium (IRPS); 2010. p. 146-51.
23. D. Marcon, M. Van Hove, D. Visalli, J. Derluyn, J. Das, and F. Medjdoub "Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C Jpn J Appl Phys 49 2010 p