Reliability and degradation mechanism of 0.25 μm AlGaN/GaN HEMTs under RF stress conditions

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2011, Pages 42-46

  Dammann, M ^a   Baeumler, M ^a   Gutle F ^a   Casar M ^a   Walcher, H ^a   Waltereit, P ^a   Bronner, W ^a   Muller S ^a   Kiefer, R ^a   Quay, R ^a   Mikulla, M ^a   Ambacher, O ^a   Graff, A ^b   Altmann, F ^b   Simon, M ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM GALLIUM NITRIDE; ARRHENIUS PLOTS; DEGRADATION; DRAIN CURRENT; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; LEAKAGE CURRENTS;

0.25 ΜM; ALGAN/GAN HEMTS; ALGAN/GAN-HEMT; CHANNEL TEMPERATURE; DEGRADATION MECHANISM; ELECTROLUMINESCENCE INTENSITY; GATE FINGERS; RF STRESS; SINGLE STAGE AMPLIFIERS; STRESS CONDITION;

THERMOGRAPHY (IMAGING);

EID: 84857517171     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IIRW.2011.6142585     Document Type: Conference Paper

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