GaN-based HEMTs tested under high temperature storage test

Microelectronics Reliability

Volumn 51, Issue 9-11, 2011, Pages 1717-1720

  Marcon, D ^a,b   Kang, X ^a   Viaene, J ^a   Van Hove, M ^a   Srivastava, P ^a,b   Decoutere, S ^a   Mertens, R ^a,b   Borghs, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CONDUCTION; DRAIN LEAKAGE CURRENT; FAILURE INVESTIGATION; GATE LEVELS; HIGH TEMPERATURE STORAGE TEST; PHYSICAL FAILURE ANALYSIS; SI SUBSTRATES; THERMAL STORAGE; TRAPPING STATE;

DRAIN CURRENT; ELECTRON MOBILITY; FAILURE ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; HEAT STORAGE; LEAKAGE CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80052955883     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.062     Document Type: Conference Paper

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