A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Marcon, D ^a,b   Kauerauf, T ^a   Medjdoub, F ^a   Das, J ^a   Van Hove, M ^a   Srivastava, P ^a,b   Cheng, K ^a   Leys, M ^a   Mertens, R ^a,b   Decoutere, S ^a   Meneghesso, G ^c   Zanoni, E ^c   Borghs, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED KINETICS; BIAS DEPENDENCE; COMPREHENSIVE RELIABILITY; CRITICAL VOLTAGES; DEVICE GEOMETRIES; DISTRIBUTION PARAMETERS; FAILURE LEVELS; LIFETIME EXTRAPOLATION; POWER LAW MODEL; STATISTICAL STUDY; TEMPERATURE DEPENDENCE; TIME TO FAILURE;

ELECTRON DEVICES; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; WEIBULL DISTRIBUTION;

DEGRADATION;

EID: 79951845045     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703398     Document Type: Conference Paper

References (11)

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