Investigation of relationship between 2DEG density and reverse leakage current in AlGaN/GaN Schottky barrier diodes

Electronics Letters

Volumn 48, Issue 5, 2012, Pages 274-275

  Terano, A ^a   Tsuchiya, T ^a   Mochizuki, K ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN; ALN; MOLE FRACTION; ORDERS OF MAGNITUDE; REVERSE LEAKAGE CURRENT;

ELECTRON GAS; GALLIUM NITRIDE;

SCHOTTKY BARRIER DIODES;

EID: 84858137335     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.3919     Document Type: Article

References (7)

1. Ambacher, O., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Schaff, M., Eastman, L.F., Dimitrov, R., Wittmer, L., Stutzmann, M., Hilsenbeck, J., and Hilsenbeck, J.: ' Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures ', J. Appl. Phys., 1999, 85, (6), p. 3222-3233 10.1063/1.369664 0021-8979
2. /GaN heterostructures ', Phys. Rev. B, 1997, 56, (3), p. 1520-1527 10.1103/PhysRevB.56.1520
3. Takatani, K., Nozawa, T., Oka, T., Kawamura, H., and Sakuno, K.: ' AlGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment ', Electron. Lett., 2008, 44, p. 320-321 10.1049/el:20083428 0013-5194
4. Miyoshi, M., Kuraoka, Y., Asai, K., Shibata, T., Tanaka, M., and Egawa, T.: ' Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN temprate ', Electron. Lett., 2007, 43, p. 953-954 10.1049/el:20071141 0013-5194
5. Ishida, H., Shibata, D., Yanagihara, M., Uemoto, Y., Matsuo, H., Ueda, T., Tanaka, T., and Ueda, D.: ' Unlimited high breakdown voltage by natural super junction of polarized semiconductor ', IEEE. Electron. Device. Lett., 2008, 29, p. 1087-1089 10.1109/LED.2008.2002753 0741-3106
6. Cao, D.S., Lu, H., Chen, D.J., Han, P., Zhang, R., and Zheng, Y.D.: ' A 1100+V AlGaN/GaN-based planar Schottky barrier diode without edge termination ', Chin. Phys. Lett., 2011, 28, (1), p. 017303 10.1088/0256-307X/28/1/017303 0256-307X
7. Sze, S.M.: ' Physics of semiconductor devices ', (Wiley, New York, USA, 2007)