Reliability testing of AlGaN/GaN HEMTs under multiple stressors

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Christiansen, Bradley D ^a   Coutu Jr , Ronald A ^a   Heller, Eric R ^b   Poling, Brian S ^b   David Via, G ^b   Vetury, Rama ^c   Shealy, Jeffrey B ^c  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c RF MICRO DEVICES   (United States)

Author keywords

failure mechanisms; GaN; high electron mobility transistor (HEMT); reliability

Indexed keywords

ALGAN/GAN HEMTS; FAILURE MECHANISM; GAN; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH VOLTAGE; HIGH-POWER; MULTIPLE STRESSORS; RELIABILITY TESTING; TEM IMAGES;

CRACKS; ELECTRICITY; ELECTRON MOBILITY; GALLIUM NITRIDE; RELIABILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79959301262     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784556     Document Type: Conference Paper

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