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Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

(4) Li, Libing a Joh, Jungwoo b Del Alamo, J A b Thompson, Carl V a

a Massachusetts Institute of Technology Cambridge (United States)

b MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ATOMIC FORCE; GAN CAP LAYERS; GATE FINGERS; HIGH-POWER; HIGH-POWER STRESS; PIT FORMATION; STRUCTURAL DEGRADATION; THERMALLY ACTIVATED;

HIGH ELECTRON MOBILITY TRANSISTORS; SCANNING ELECTRON MICROSCOPY; SPATIAL DISTRIBUTION;

GALLIUM NITRIDE;

EID: 84860338189 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4707163 Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.