Fundamental failure mechanisms limiting maximum voltage operation in AlGaN/GaN HEMTs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Hodge, Michael D ^a,b   Vetury, Ramakrishna ^a   Shealy, Jeffrey B ^a  

^a RF MICRO DEVICES   (United States)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HEMTS; APPLIED VOLTAGES; CHANNEL CURRENTS; DEVICE FAILURES; DRAIN LEAKAGE CURRENT; DRAIN VOLTAGE; FAILURE MECHANISM; GATE CONTROL; GATE DIODES; HIGH VOLTAGE; VOLTAGE OPERATIONS;

GALLIUM NITRIDE; LEAKAGE CURRENTS;

FAILURE (MECHANICAL);

EID: 84866598914     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241816     Document Type: Conference Paper

References (13)

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