High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 146-151

  Marcon, Denis ^a,b   Medjdoub, Farid ^a   Visalli, Domenica ^a,b   Van Hove, Marleen ^a   Derluyn, Joff ^a   Das, Jo ^a   Degroote, Stefan ^a   Leys, Maarten ^a   Cheng, Kai ^a   Decoutere, Stefaan ^a   Mertens, Robert ^a,b   Germain, Marianne ^a   Borghs, Gustaaf ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Failure mechanisms; GaN HEMT; Reliability

Indexed keywords

AMBIENT TEMPERATURES; CAP LAYERS; DRAIN BIAS; DRAIN VOLTAGE; FAILURE MECHANISM; GAN HEMTS; GATE CURRENT; GATE DRAIN; GATE VOLTAGES; HIGH DRAIN VOLTAGE; HIGH ELECTRIC FIELDS; HIGH TEMPERATURE; IN-SITU; JUNCTION TEMPERATURES; OFF-STATE STRESS; SI SUBSTRATES;

DEGRADATION; ELECTRIC FIELDS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; RELIABILITY; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77957921212     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488836     Document Type: Conference Paper

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