Correlation of single trapping and detrapping effects in drain and gate currents of nanoscaled nFETs and pFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2012, Pages

  Toledano Luque, M ^a   Kaczer, B ^a   Simoen, E ^a   Degraeve, R ^a   Franco, J ^a,c   Roussel, Ph J ^a   Grasser, T ^b   Groeseneken, G ^a,c  

^a IMEC   (Belgium)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

drain current RTN; Gate current RTN; gate leakage current; I D RTN; I G RTN; MOSFET; Random Telegraph Noise current RTN; reliability; SiON; variability

Indexed keywords

GATE CURRENT; GATE-LEAKAGE CURRENT; MOS-FET; RANDOM TELEGRAPH NOISE; SION; VARIABILITY;

RELIABILITY;

EID: 84866617730     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2012.6241935     Document Type: Conference Paper

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