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Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures

(7) Crupi, F a Giusi, G a Iannaccone, G b Magnone, P a Pace, C a Simoen, E c Claeys, C c,d

a UNIVERSITY OF CALABRIA (Italy)

b UNIVERSITY OF PISA (Italy)

c IMEC (Belgium)

d UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; ANALYTICAL MODEL; APPLIED VOLTAGES; BIAS DEPENDENCE; DE-TRAPPING; FERMI ENERGY; GATE CURRENT NOISE; INVERSION LAYER; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NMOSFETS; NUMERICAL SIMULATION; OXIDE THICKNESS; OXIDE TRAPS; POLYSILICON GATES; POTENTIAL BARRIERS; RANDOM TELEGRAPH SIGNALS; SPATIAL POSITIONS; SUBSTRATE INTERFACE; TRAP DENSITY; TUNNELING CURRENT;

ACOUSTIC NOISE MEASUREMENT; COMPUTER SIMULATION; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; MODELS; POLYSILICON; TELEGRAPH; TUNNELING (EXCAVATION); WIND TUNNELS;

DIELECTRIC DEVICES;

EID: 70350104952 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3236637 Document Type: Article

Times cited : (28)

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