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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

(6) Toledano Luque, M a Kaczer, B a Roussel, Ph a Cho, M J a Grasser, T b Groeseneken, G a,c

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

b INSTITUTE FOR MICROELECTRONICS (Austria)

c UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEFECTS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; METALLIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; NITROGEN COMPOUNDS; OXIDE SEMICONDUCTORS; SILICON; SILICON COMPOUNDS; SULFUR COMPOUNDS; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE; TRANSISTORS;

CHARACTERISTIC EMISSION; CHARACTERIZATION TECHNIQUES; DEFECT SPECTROSCOPY; NON-VOLATILE MEMORY; POSITIVE BIAS TEMPERATURES; STATISTICAL PROPERTIES; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION ENERGIES;

FLUORINE COMPOUNDS;

EID: 79551640965 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3532947 Document Type: Conference Paper

Times cited : (25)

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