Random telegraph noise: From a device physicist's dream to a designer's nightmare

ECS Transactions

Volumn 39, Issue 1, 2011, Pages 3-15

  Simoen, E ^a   Kaczer, B ^a   Toledano Luque, M ^a,b   Claeys, C ^a,c  

^a IMEC   (Belgium)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEEP LEVEL TRANSIENT SPECTROSCOPY; FREQUENCY DOMAIN ANALYSIS; MICROELECTRONICS; STOCHASTIC MODELS; STOCHASTIC SYSTEMS; TELEGRAPH;

BIAS TEMPERATURE INSTABILITY; DEEP-SUBMICRON CMOS TECHNOLOGY; FREQUENCY DOMAIN MEASUREMENT; FUNDAMENTAL COMPONENT; RANDOM DOPANT FLUCTUATION; RANDOM TELEGRAPH NOISE; RELIABILITY PREDICTION; SELF CONSISTENT MODELING;

MOS DEVICES;

EID: 84856886641     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3615171     Document Type: Conference Paper

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