Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Chen, Chia Yu ^a   Ran, Qiushi ^a   Hyun Jin Cho, ^b   Kerber, Andreas ^b   Liu, Yang ^a   Lin, Ming Ren ^b   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

high ; Metal gate; MOS transistor; PBTI; Random telegraph noise; scaling

Indexed keywords

DE-TRAPPING; METAL GATE; MOS-FET; MOSFETS; NMOSFETS; PBTI; PHYSICAL TRAPPING; POSITIVE BIAS TEMPERATURE INSTABILITIES; RANDOM TELEGRAPH NOISE; SCALING; TCAD SIMULATION;

INTEGRATED CIRCUITS; TELEGRAPH; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

MOSFET DEVICES;

EID: 79959285652     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784475     Document Type: Conference Paper

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