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Applied Physics Letters

Volumn 96, Issue 26, 2010, Pages

Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique

(5) Kimura, Mutsumi a Kamiya, Toshio b Nakanishi, Takashi a Nomura, Kenji b Hosono, Hideo b

a RYUKOKU UNIVERSITY (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE METHOD; CIRCUIT SIMULATORS; ELECTRICAL CHARACTERISTIC; ELECTRONIC APPLICATION; FIELD-EFFECT; INTRINSIC PROPERTY; MOBILITY MODEL; TRAP DENSITY;

AMORPHOUS FILMS; FIELD EFFECT TRANSISTORS; FLAT PANEL DISPLAYS; GALLIUM; MODELS; THIN FILM TRANSISTORS; ZINC;

CARRIER MOBILITY;

EID: 77954336875 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3455072 Document Type: Article

Times cited : (57)

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