Investigation on the characteristics of stress-induced hump in amorphous oxide thin film transistors

Applied Physics Letters

Volumn 99, Issue 4, 2011, Pages

  Kim, Jang Hyun ^a   Kwon, Dae Woong ^a   Chang, Ji Soo ^a   Kim, Sang Wan ^a   Park, Jae Chul ^b   Kim, Chang Jung ^b   Park, Byung Gook ^a  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDES; CHANNEL WIDTHS; DC BIAS; EDGE REGION; ELECTRIC FIELD DISTRIBUTIONS; ELECTRICAL FIELD; GATE INSULATOR; HUMP CHARACTERISTIC; LIGHT STRESS; NEGATIVE GATE; OPTICAL ENERGY; STRESS-INDUCED;

ELECTRIC FIELDS; HAFNIUM; INDIUM; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC OXIDE;

AMORPHOUS FILMS;

EID: 79961052303     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3606538     Document Type: Article

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