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Volumn 14, Issue 34, 2002, Pages
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The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: A review
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CRYSTAL DEFECTS;
CRYSTAL IMPURITIES;
ELECTRIC CONDUCTIVITY;
ELECTRON MOBILITY;
HOLE MOBILITY;
MATERIALS SCIENCE;
POSITIVE IONS;
WIDE-GAP MATERIALS;
SEMICONDUCTOR DOPING;
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EID: 0037009055
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/14/34/201 Document Type: Review |
Times cited : (221)
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References (107)
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