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Volumn 14, Issue 34, 2002, Pages

The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: A review

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HOLE MOBILITY; MATERIALS SCIENCE; POSITIVE IONS;

EID: 0037009055     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/34/201     Document Type: Review
Times cited : (221)

References (107)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.