Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors

Journal of Applied Physics

Volumn 87, Issue 1, 2000, Pages 144-154

  Wehrspohn, R B ^a   Deane, S C ^a   French, I D ^a   Gale, I ^a   Hewett, J ^a   Powell, M J ^a   Robertson, J ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001463894     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371836     Document Type: Article

References (65)

1. K. Susuzi, in Amorphous and Microcystalline Semiconductor Devices: Optoelectronic Devices, edited by J. Kanicki (Artech House, Boston, 1991).
2. M. J. Powell, IEEE Trans. Electron Devices 36, 2753 (1989).
3. N. D. Young, R. M. Brunn, R. W. Wilks, D. J. McCulloch, S. C. Deane, M. J. Edwards, G. Harkin and A. D. Pearson, J. Soc. Inf. Disp. 5/3, 275 (1997).
4. V. Da Costa and R. A. Martin, IEEE J. Solid-State Circuits 29, 596 (1994).
5. R. G. Stewart, J. Dresner, S. Weisbrod, R. I. Huq, D. Plus. B. Mourley, B. Depp, and A. Dupont, Society of Information Display Proceedings, 1995, p. 89.
6. C. van Berkel and M. J. Powell, Appl. Phys. Lett. 51, 1094 (1987).
7. C. Chiang, C. Chen, and J. Kanicki, IEEE Electron Device Lett. 19, 382 (1998).
8. J. P. Kleider and F. Dayoub, Phys. Rev. B 58, 10401 (1998).
9. M. J. Powell, C. van Berkel, A. R. Franklin, S. C. Deane, and W. I. Milne, Phys. Rev. B 45, 4160 (1992).
10. M. J. Powell, C. van Berkel, and J. R. Hughes, Appl. Phys. Lett. 54, 1323 (1989).
11. Y. Kaneko, A. Sasano, T. Tsukuda. R. Oritsuki, and K. Suzuki, Extended Abstracts of the 18th Conference on Solid State Device Materials, 1996, p. 699.
12. I. D. French, S. C. Deane, D. T. Murley, J. Hewett, I. G. Gale, and M. J. Powell, Mater. Res. Soc. Symp. Proc. 467, 875 (1997).
13. H. Meiling and R. E. I. Schropp, Appl. Phys. Lett. 70, 2681 (1997).
14. M. Stutzmann, Philos. Mag. B 60, 531 (1989).
15. R. A. Street, Physica B 170, 69 (1991).
16. W. Beyer, Semiconductors and Semimetals (Academic, New York, 1999), Vol. 61, p. 165.
17. J. Perrin, in Plasma Deposition of Amorphous Silicon Based Materials, edited by G. Bruno, P. Capezzuto, and A. Madan (Academic, New York, 1995), p. 207.
18. P. Roca i Caborrocas, P. Gay, and A. Hadjadj, J. Vac. Sci. Technol. A 14, 655 (1996).
19. J. Perrin, J. Non-Cryst. Solids 137/138, 630 (1991).
20. R. B. Wehrspohn, S. C. Deane, I. D. French, I. G. Gale, M. J. Powell, and R. Brüggemann, Appl. Phys. Lett. 74, 3374 (1999).
21. Y. Hishikawa, S. Tsuge, N. Nakamura, K. Wakizaka, S. Kouzuma, S. Tsuda, S. Nakano, Y. Kishi, and Y. Kuwano, J. Non-Cryst. Solids 137/138, 717 (1991).
22. G. Stoney, Proc. R. Soc. London, Ser. A 82, 172 (1909).
23. F. Jansen, M. A. Machokin, N. Palmieri, and D. Kuhman, J. Appl. Phys. 62, 4732 (1987).
24. A. S. Korhonen, P. L. Jones, and F. H. Cocks, Mater. Sci. Eng. 49, 127 (1981).
25. T. Dragone, S. Wagner, and T. D. Moustakas, Technical Digest of the 1st International Photovoltaic Science and Engineering Conference, Kobe, Japan, 1984, p. 711.
26. M. Grimsditch, W. Senn, and G. Winterling, Solid State Commun. 26, 229 (1978).
27. T. M. Hayes and M. E. Kassner, in Amorphous Silicon and its Alloys, edited by T. Serale, Data Series (INSPEC, Herts, UK, 1998), p. 359.
28. H. Windischmann, J. Appl. Phys. 62, 1800 (1987), and references therein.
29. J. Dutta, U. Kroll, P. Chabloz, A. Shah, A. A. Howling, J.-L. Dorier, and Ch. Hollenstein, J. Appl. Phys. 72, 3220 (1992).
30. T. Ito, N. Fujimora, and Y. Nakayama, Trans. Jpn. Inst. Met. 27, 789 (1986).
31. Y. Hishikawa, J. Appl. Phys. 62, 3150 (1987).
32. S. Oguz. D. A. Anderson, W. Paul, and H. J. Stein, Phys. Rev. B 22, 880 (1980).
33. The intrinsic stress values of the tensile material might, however, be affected by a much higher error than the compressive stress data, since the Young's modulus of the α-regime samples varies significantly. According to Eq. (2), this leads to a lower thermal expansion mismatch of substrate and film.
34. D. L. Smith, Thin Film Deposition IMcGraw-Hill, New York, 1995), Chap. 5.6.
35. Y. Kaneko, A. Sasano, and T. Tsukada, J. Appl. Phys. 69, 7301 (1991).
36. W. B. Jackson, J. M. Marshall, and M. D. Moyer, Phys. Rev. B 39, 1164 (1989).
37. W. B. Jackson, Phys. Rev. B 41, 1059 (1990).
38. S. C. Deane, R. B. Wehrspohn, and M. J. Powell, Phys. Rev. B 58, 12625 (1998)
39. F. R. Libsch and J. Kanicki, Appl. Phys. Lett. 62, 1286 (1993).
40. Y. Fujimoto, IBM J. Res. Dev. 36, 76 (1992).
41. M. Stutzmann, W. B. Jackson, and C. C. Tsai, Phys. Rev. B 32, 23 (1985).
42. M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984).
43. M. J. Powell and S. C. Deane, Phys. Rev. B 48, 10815 (1993).
44. S. C. Deane and M. J. Powell, J. Appl. Phys. 74, 6655 (1993).
45. R. S. Crandall, Phys. Rev. B 43, 4057 (1991).
46. H. M. Branz, Phys. Rev. B 59, 5498 (1999).
47. M. J. Powell and S. C. Deane, Phys. Rev. B 53, 10121 (1996).
48. S. Sherman, S. Wagner, and R. A. Gottscho, Appl. Phys. Lett. 69, 3242 (1996).
49. W. Beyer, J. Non-Cryst. Solids 198-200, 40 (1996).
50. C. G. van de Walle and N. Nickel, Phys. Rev. B 51, 2636 (1995).
51. R. Biswas and Q. Ling, Appl. Phys. Lett. 68, 2261 (1996).
52. J. D. Joannopoulos, Phys. Rev. B 16, 2764 (1977).
53. R. A. Street and K. Winer, Phys. Rev. B 40, 6236 (1989).
54. G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. B 57, 6933 (1998).
55. P. A. Fedders, D. A. Drabold, and S. Nakhmanson, Phys. Rev. B 58, 15624 (1998).
56. G. Martinez, Handbook of Semiconductors (1960, Vol. 2, p. 181; M. J. Powell, Ph.D. thesis, Cambridge University, 1977), and references therein.
57. G. Martinez, Handbook of Semiconductors (1960, Vol. 2, p. 181; M. J. Powell, Ph.D. thesis, Cambridge University, 1977), and references therein.
58. P. Bulkin, N. Betrand, and B. Drevillon, Thin Solid Films 296, 66 (1997).
59. H. Oechsner, in Plasma Processing of Semiconductors, edited by P. F. Williams (Kluwer, Dordrecht, The Netherlands, 1997), p. 157.
60. E. A. G. Hamers, J. Bezemer, H. Meiling, W. G. J. H. M. van Sark, and W. F. van der Weg, Mater. Res. Soc. Symp. Proc. 467, 603 (1997).
61. M. Stutzmann, Appl. Phys. Lett. 47, 21 (1985).
62. A. Ghaith, Philos. Mag. Lett. 55, 197 (1987).
63. S. Guha, W. den Boer, S. C. Agarwal, and M. Hack, Appl. Phys. Lett. 47, 947 (1985).
64. L. B. Freund, J. A. Flora, and E. Chason, Appl. Phys. Lett. 74, 1987 (1999).
65. C. Godet and P. Roca i Cabarrocas, J. Appl. Phys. 80, 97 (1996).