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Volumn 84, Issue 6, 2000, Pages 1232-1235

Microscopic origin of the phenomenological equilibrium “doping limit rule” inn-Type III-V semiconductors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000095497     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.1232     Document Type: Article
Times cited : (223)

References (23)
  • 8
    • 0004820271 scopus 로고    scopus 로고
    • K. Wada and S. PangCandB Science Publishers, Newark, and references therein
    • W. Walukiewicz, in Defects in Optoelectronic Materials, K. Wada and S. Pang (CandB Science Publishers, Newark, 1999), and references therein.
    • (1999) Defects in Optoelectronic Materials
    • Walukiewicz, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.