Magnetoresistance and Hall effect in amorphous silicon-tantalum alloys near the metal-insulator transition

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 548-553

  Wright, T ^a   Popescu, Benedict ^b   Adkins, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

Hall effect; Magnetoresistance; Silicon tantalum alloys

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CHARGE CARRIERS; HALL EFFECT; MAGNETORESISTANCE; SILICON ALLOYS; TEMPERATURE MEASUREMENT;

METAL INSULATOR TRANSITION; SILICON TANTALUM ALLOYS;

AMORPHOUS ALLOYS;

EID: 0032067148     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00115-X     Document Type: Article

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