A model analysis of feature profile evolution and microscopic uniformity during polysilicon gate etching in Cl2/O2 plasmas

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8157-8162

  Osano, Yugo ^a,c   Mori, Masahito ^b   Itabashi, Naoshi ^b   Takahashi, Kazuo ^a,d   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

^c NIKON CORPORATION   (Japan)

^d KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Chlorine chemistries; Electron cyclotron resonance plasma etching; Etch anisotropy; Feature profile evolution; Microscopic uniformity; Monte Carlo simulation; Passivation layers; Silicon etching

Indexed keywords

COMPUTER SIMULATION; MONTE CARLO METHODS; OPTICAL ANISOTROPY; PASSIVATION; POLYSILICON;

CHLORINE CHEMISTRIES; ELECTRON-CYCLOTRON-RESONANCE PLASMA ETCHING; FEATURE PROFILE EVOLUTION; MICROSCOPIC UNIFORMITY; PASSIVATION LAYERS; SILICON ETCHING;

PLASMA ETCHING;

EID: 34547854786     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8157     Document Type: Article

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