Modeling of implantation and mixing damage during etching of SiO 2 over Si in fluorocarbon plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 5, 2011, Pages

  Wang, Mingmei ^a,c   Kushner, Mark J ^b  

^a Iowa State University   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATE METHODS; CHEMICAL PROCESS; COMPUTATIONAL EXPENSE; CRYSTALLINE LATTICE; ENERGETIC FLUX; FLAT SURFACES; FLUOROCARBON PLASMA; HIGH ASPECT RATIO; ION ENERGIES; MD SIMULATION; MIXING MODELS; MOLECULAR DYNAMICS SIMULATIONS; MONTE CARLO; RF BIAS; SCALE MODELS;

APPROXIMATION THEORY; ASPECT RATIO; COMPUTER SIMULATION; ION BOMBARDMENT; IONS; MICROELECTRONICS; MOLECULAR DYNAMICS; PLASMA ETCHING; SILICON; SILICON COMPOUNDS;

MIXING;

EID: 80052419167     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3626533     Document Type: Article

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