Atomic-scale cellular model and profile simulation of Si etching: Formation of surface roughness and residue

Thin Solid Films

Volumn 518, Issue 13, 2010, Pages 3475-3480

  Tsuda, Hirotaka ^a   Mori, Masahito ^a   Takao, Yoshinori ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Etching; Oxidation; Silicon; Silicon oxide; Surface roughness

Indexed keywords

ATOMIC SCALE; BOTTOM SURFACES; CELLULAR MODEL; ENERGETIC ION; FORMATION MECHANISM; GEOMETRICAL SHADOWING; ION SCATTERING; LOCAL FEATURE; LOCAL SURFACES; MICRO-PILLARS; MICROSTRUCTURAL FEATURES; MONTE CARLO ALGORITHMS; NUMERICAL SIMULATION; PROFILE EVOLUTION; ROUGHENED SURFACES; SILICON OXIDE SURFACES; SURFACE OXIDATIONS; SYNERGISTIC EFFECT;

COMPUTER SIMULATION; ETCHING; IONS; METAL ANALYSIS; MICROSTRUCTURAL EVOLUTION; OXIDATION; OXYGEN; PLASMA INTERACTIONS; SILICON COMPOUNDS; SURFACE PROPERTIES; SURFACE ROUGHNESS;

SILICON OXIDES;

EID: 77949439887     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.11.043     Document Type: Article

References (23)

1. Oehrlein G.S., Rembetski J.F., and Payne E.H. J. Vac. Sci. Technol. B 8 (1990) 1199
2. Oehrlein G.S., and Kurogi Y. Mater. Sci. Eng. 24 (1998) 153
3. Chow T.P., Maciel P.A., and Fanelli G.M. J. Electrochem. Soc. 134 (1987) 1281
4. Jansen H., Gardeniers H., De Boer M., Elwenspoek M., and Fluitman J. J. Micromech. Microeng. 6 (1996) 14
5. Hwang G.S., and Giapis K.P. J. Vac. Sci. Technol. B 15 (1997) 70
6. Hwang G.S., and Giapis K.P. Appl. Phys. Lett. 70 (1997) 2377
7. Hwang G.S., and Giapis K.P. J. Vac. Sci. Technol. B 15 (1997) 1741
8. Jin W., and Sawin H.H. J. Vac. Sci. Technol. A 21 (2003) 911
9. Oehrlein G.S., Schad R.G., and Jaso M.A. Surf. Interf. Anal. 8 (1986) 243
10. Hayakawa T., Suzuki T., Uesugi T., and Mitsushima Y. Jpn. J. Appl. Phys. 37 (1998) 5
11. Tuda M., Ono K., and Nishikawa K. J. Vac. Sci. Technol. B 14 (1996) 3291
12. Tuda M., Nishikawa K., and Ono K. J. Appl. Phys. 81 (1997) 960
13. Vyvoda M.A., Li M., Graves D.B., Lee H., Malyshev M.V., Klemens F.P., Lee J.T.C., and Donnelly V.M. J. Vac. Sci. Technol. B 18 (2000) 820
14. Hwang H.H., Meyyappan M., Mathad G.S., and Ranade R. J. Vac. Sci. Technol. B 20 (2002) 2199
15. Osano Y., and Ono K. Jpn. J. Appl. Phys. 44 (2005) 8650
16. Osano Y., Mori M., Itabashi N., Takahashi K., Eriguchi K., and Ono K. Jpn. J. Appl. Phys. 45 (2006) 8157
17. Osano Y., and Ono K. J. Vac. Sci. Technol. B 26 (2008) 1425
18. Mahorowala A.P., and Sawin H.H. J. Vac. Sci. Technol. B 20 (2002) 1064
19. Gottscho R.A. J. Vac. Sci. Technol. B 11 (1993) 1884
20. Stillinger F.H., and Weber T.A. Phys. Rev. B 31 (1985) 5262
21. Feil H., Dieleman J., and Garrison B.J. J. Appl. Phys. 74 (1993) 1303
22. Abrams C.F., and Graves D.B. J. Vac. Sci. Technol. A 16 (1998) 3006
23. Jin W., Vitale S.A., and Sawin H.H. J. Vac. Sci. Technol. A 20 (2002) 2106