Simulations and experiments of etching of silicon in HBr plasmas for high aspect ratio features

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2199-2205

  Hwang, Helen H ^a   Meyyappan, M ^a   Mathad, G S ^b   Ranade, R ^b  

^a NASA AMES RESEARCH CENTER   (United States)

^b INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; BROMINE COMPOUNDS; COMPUTER SIMULATION; ETCHING; NUMERICAL METHODS; PLASMAS; SCANNING ELECTRON MICROSCOPY;

HALIDES; HYDROGEN BROMIDE PLASMAS;

SEMICONDUCTING SILICON;

EID: 0036883094     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1513621     Document Type: Article

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