Atomic-scale cellular model and profile simulation of Si etching: Analysis of profile anomalies and microscopic uniformity

Japanese Journal of Applied Physics

Volumn 49, Issue 8 PART 2, 2010, Pages

  Tsuda, Hirotaka ^a   Mori, Masahito ^a   Takao, Yoshinori ^a   Eriguchi, Koji ^a   Ono, Kouichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CELLULAR MODEL; ETCH RATES; FORMATION MECHANISM; HIGH DENSITY PLASMAS; ION FLUXES; ION-ENHANCED ETCHING; MICRO-TRENCH; MICROSTRUCTURAL FEATURES; NUMERICAL RESULTS; RIE LAG; SEMICONDUCTOR INTEGRATED CIRCUITS; SYNERGISTIC EFFECT;

COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; IONS; MICROSTRUCTURAL EVOLUTION; PLASMA ETCHING; SEMICONDUCTOR DEVICES;

REACTIVE ION ETCHING;

EID: 77958113261     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.08JE01     Document Type: Article

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