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Volumn 518, Issue 13, 2010, Pages 3461-3468
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Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study
a
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Author keywords
Cl and Br based plasmas; High k dielectrics; MD simulation; Metal electrode materials; Plasma etching; Profile simulation; Silicon; ULSI
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Indexed keywords
, INHIBITOR;
ATOMIC SCALE;
CELLULAR MODEL;
CLASSICAL MOLECULAR DYNAMICS;
ETCH MECHANISM;
ETCH YIELD;
ETCHING PROCESS;
FRONT END OF LINES;
HIGH-K DIELECTRIC;
INTERATOMIC POTENTIAL MODELS;
MD SIMULATION;
METAL ELECTRODE MATERIALS;
METAL/HIGH-K GATE;
MICRO-TRENCH;
MONTE CARLO;
NANO SCALE;
NANO-METER SCALE;
NUMERICAL AND EXPERIMENTAL STUDY;
NUMERICAL RESULTS;
PLASMA ETCHING PROCESS;
PLASMA-SURFACE INTERACTIONS;
PROFILE EVOLUTION;
PROFILE SIMULATION;
SELECTIVE ETCHING;
SURFACE ANOMALIES;
SURFACE OXIDATIONS;
ULSI DEVICES;
ANISOTROPIC ETCHING;
DIELECTRIC MATERIALS;
HAFNIUM COMPOUNDS;
MOLECULAR DYNAMICS;
NANOSTRUCTURED MATERIALS;
NUMERICAL ANALYSIS;
PLASMA ETCHING;
PLASMA INTERACTIONS;
REACTION KINETICS;
STOICHIOMETRY;
SURFACE REACTIONS;
TANTALUM COMPOUNDS;
ULSI CIRCUITS;
SURFACES;
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EID: 77949480570
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.11.030 Document Type: Article |
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Times cited : (33)
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References (36)
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